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SFH610A / SFH6106
Vishay Semiconductors
Optocoupler, Phototransistor Output, High Reliability, 5300 VRMS
Features
* Good CTR Linearity Depending on Forward Current * Isolation Test Voltage, 5300 VRMS e3 * High Collector-Emitter Voltage, VCEO = 70 V * Low Saturation Voltage * Fast Switching Times * Low CTR Degradation * Temperature Stable * Low Coupling Capacitance * End-Stackable, 0.100" (2.54 mm) Spacing * High Common-Mode Interference Immunity * Lead (Pb)-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
A C
1 2
SFH610A
4 3
E C
SFH6106 A1 C2 4E 3C
i179056
Agency Approvals
* UL1577, File No. E52744 System Code H or J, Double Protection * DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 * CSA 93751 * BSI IEC60950 IEC60065
Order Information
Part SFH610A-1 SFH610A-2 SFH610A-3 SFH610A-4 SFH610A-5 SFH6106-1 SFH6106-2 SFH6106-3 SFH6106-4 SFH6106-5T SFH610A-1X006 SFH610A-1X018T SFH610A-2X006 SFH610A-3X006 SFH610A-3X007 SFH610A-4X006 Remarks CTR 40 - 80 %, DIP-4 CTR 63 - 125 %, DIP-4 CTR 100 - 200 %, DIP-4 CTR 160 - 320 %, DIP-4 CTR 250 - 500 %, DIP-4 CTR 40 - 80 %, SMD-4 CTR 63 - 125 %, SMD-4 CTR 100 - 200 %, SMD-4 CTR 160 - 320 %, SMD-4 CTR 250 - 500 %, SMD-4, tape and reel CTR 40 - 80 %, DIP-4 400 mil CTR 40 - 80 %, SMD-4, wide leadspread CTR 63 - 125 %, DIP-4 400 mil CTR 100 - 200 %, DIP-4 400 mil CTR 100 - 200 %, SMD-4 CTR 160 - 320 %, DIP-4 400 mil
Description
The SFH610A (DIP) and SFH6106 (SMD) feature a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 or SMD package. The coupling devices are designed for signal transmission between two electrically separated circuits. The couplers are end-stackable with 2.54 mm spacing. Creepage and clearance distances of > 8.0 mm are achieved with option 6. This version complies with IEC 60950 (DIN VDE 0805) for reinforced insulation up to an operation voltage of 400 VRMS or DC. Specifications subject to change.
For additional information on the available options refer to Option Information.
Document Number 83666 Rev. 1.9, 23-Mar-06
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SFH610A / SFH6106
Vishay Semiconductors Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Reverse voltage DC Forward current Surge forward current Power dissipation t 10 s Test condition Symbol VR IF IFSM Pdiss Value 6.0 60 2.5 100 Unit V mA A mW
Output
Parameter Collector-emitter voltage Emitter-collector voltage Collector current t 1.0 ms Power dissipation Test condition Symbol VCE VEC IC IC Pdiss Value 70 7.0 50 100 150 Unit V V mA mA mW
Coupler
Parameter Isolation test voltage between emitter and detector, refer to climate DIN 40046, part 2, Nov. 74 Creepage Clearance Insulation thickness between emitter and detector Comparative Tracking index per DIN IEC 112/VDEO 303, part 1 Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Storage temperature range Ambient temperature range Junction temperature Soldering temperature max. 10 s. dip soldering distance to seating plane 1.5 mm RIO RIO Tstg Tamb Tj Tsld Test condition Symbol VISO Value 5300 Unit VRMS
7.0 7.0 0.4 175 1012 1011 - 55 to + 150 - 55 to + 100 100 260
mm mm mm
C C C C
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Document Number 83666 Rev. 1.9, 23-Mar-06
SFH610A / SFH6106
Vishay Semiconductors Electrical Characteristics
Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Forward voltage Reverse current Capacitance Thermal resistance Test condition IF = 60 mA VR = 6.0 V VR = 0 V, f = 1.0 MHz Symbol VF IR CO Rthja Min Typ. 1.25 0.01 13 750 Max 1.65 10 Unit V A pF K/W
Output
Parameter Collector-emitter capacitance Thermal resistance Collector-emitter leakage current VCE = 10 V SFH610A-1 SFH6106-1 SFH610A-2 SFH6106-2 SFH610A-3 SFH6106-3 SFH610A-4 SFH6106-4 SFH610A-5 SFH6106-5T Test condition VCE = 5 V, f = 1.0 MHz Part Symbol CCE Rthja ICEO ICEO ICEO ICEO ICEO Min Typ. 5.2 500 2.0 2.0 5.0 5.0 5.0 50 50 100 100 100 Max Unit pF K/W nA nA nA nA nA
Coupler
Parameter Collector-emitter saturation voltage Coupling capacitance Test condition IF = 10 mA, f = 1.0 MHz Symbol VCEsat CC Min 0.4 Typ. 0.25 0.4 Max Unit V pF
Document Number 83666 Rev. 1.9, 23-Mar-06
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SFH610A / SFH6106
Vishay Semiconductors Current Transfer Ratio
Parameter IC/IF Test condition IF = 10 mA, VCE = 5.0 V Part SFH610A-1 SFH6106-1 SFH610A-2 SFH6106-2 SFH610A-3 SFH6106-3 SFH610A-4 SFH6106-4 SFH610A-5 SFH6106-5T IF = 1.0 mA, VCE = 5.0 V SFH610A-1 SFH6106-1 SFH610A-2 SFH6106-2 SFH610A-3 SFH6106-3 SFH610A-4 SFH6106-4 Symbol CTR CTR CTR CTR CTR CTR CTR CTR CTR Min 40 63 100 160 250 13 22 34 56 30 45 70 90 Typ. Max 80 125 200 320 500 Unit % % % % % % % % %
Switching Non-saturated All values presented are typical values
Parameter Test condition Symbol Unit IF mA 10 tr s 2.0 Current Rise time Fall time VCC = 5.0 V, RL = 75 tf s 2.0 ton s 3.0 toff s 2.3 Turn-on tim Turn-off time Cut-off frequency VCC = 5.0 V FCO kHz 250
Switching Saturated All values presented are typical values
Parameter Symbol Unit SFH610A-1 SFH6106-1 SFH610A-2 SFH6106-2 SFH610A-3 SFH6106-3 SFH610A-4 SFH6106-4 Current IF mA 20 10 10 5.0 Rise time tr s 2.0 3.0 3.0 4.6 Fall time tf s 11 14 14 15 Turn-on time ton s 3.0 4.2 4.2 6.0 Turn-off time toff s 18 23 23 25
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Document Number 83666 Rev. 1.9, 23-Mar-06
SFH610A / SFH6106
Vishay Semiconductors Typical Characteristics
Tamb = 25 C, unless otherwise specified
IF
RL = 75 VCC = 5 V IC
47
isfh610a_01
isfh610a_04
Figure 1. Linear Operation ( without Saturation)
Figure 4. Output Characteristics (typ.) Collector Current vs. Collector-Emitter Voltage
VF = f (IF)
IF
1.0 k VCC = 5 V
47
isfh610a_02
isfh610a_05
Figure 2. Switching Operation (with Saturation)
Figure 5. Diode Forward Voltage vs. Forward Current
f = 1.0 MHz IF = 10 mA, VCC = 5.0 V
isfh610a_03
isfh610a_06
Figure 3. Current Transfer Ratio (CTR) vs. Temperature
Figure 6. Transistor Capacitance (typ.) vs. Collector-Emitter Voltage
Document Number 83666 Rev. 1.9, 23-Mar-06
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SFH610A / SFH6106
Vishay Semiconductors
Pulse cycle D = parameter,
isfh610a_07
Figure 7. Permissible Pulse Handling Capability Forward Current vs. Pulse Width
Ptot = f (TA)
isfh610a_08
Figure 8. Permissible Power Dissipation vs. Temperature
isfh610a_09
Figure 9. Permissible Diode Forward Current vs. Ambient Temperature
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Document Number 83666 Rev. 1.9, 23-Mar-06
SFH610A / SFH6106
Vishay Semiconductors Package Dimensions in Inches (mm)
0.268 (6.81) 0.255 (6.48)
PIN 1 IDENTIFICATION 0.190 (4.83) 0.179 (4.55)
0.312 (7.92) 0.296 (7.52) 10 0.045 (1.14) 0.030 (0.76) 0.033 (0.84) 0.029 (0.74)
ISO Method A
0.150 (3.81) 0.130 (3.30) 4 typ. 0.052 (1.32) 0.048 (1.22)
i178027-1
0.250(6.35) 0.230(5.84)
0.130 (3.30) 0.110 (2.79)
0.035(0.89) 0.020(0.51)
3-9 0.012 (0.30) 0.008 (0.20)
0.105 (2.67) 0.095 (2.41)
Package Dimensions in Inches (mm)
SMD
0.268(6.81) 0.255(6.48)
0.190 (4.83) 0.179 (4.55) PIN 1 IDENTIFICATION
0.030(0.76) 0.100(2.54) R 0.010(.25) 0.070(1.78)
0.315 (8.00) min
0.060(1.52)
0.435(11.05)
0.045(1.14) 0.030(0.76)
0.395(10.03) 0.375(9.52) 0.312(7.92) 0.296(7.52) 10
0.033(0.84) 0.029(0.74)
0.150 (3.81) 0.130 (3.30)
ISO Method A
4 typ. 0.052(1.32) 0.048(1.22)
i178029-2
0.012(0.30) 0.008(0.20)
0.0098 (0.249) 0.004 (0.102)
Lead coplanarity 0.004 (0.102) max.('K')
0.105(2.67) 0.095(2.41)
Document Number 83666 Rev. 1.9, 23-Mar-06
www.vishay.com 7
SFH610A / SFH6106
Vishay Semiconductors
Option 6
0.407 (10.36) 0.391 (9.96) 0.307 (7.8) 0.291 (7.4) 0.028 (0.7) MIN.
Option 7
0.300 (7.62) TYP .
Option 8
0.300 (7.62) TYP. 0.020 (0.50) 0.000 (0.00)
0.180 (4.6) 0.160 (4.1) 0.315 (8.0) MIN.
0.150 (3.81) 0.130 (3.30) 0.365 (9.27) MIN. 0.472 (12.00) MAX.
18487
0.014 (0.35) 0.010 (0.25) 0.400 (10.16) 0.430 (10.92)
0.331 (8.4) MIN. 0.406 (10.3) MAX.
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Document Number 83666 Rev. 1.9, 23-Mar-06
SFH610A / SFH6106
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 83666 Rev. 1.9, 23-Mar-06
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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